Structures of polarization-isolated high electron mobility transistors (PI-HEMTs) exhibit significantly reduced isolation leakage currents by up to nearly two orders of magnitude at 50 V voltage bias compared to the state-of-the-art results. The two-dimensional electron gas (2DEG) was formed at III-polar regions but completely depleted in N-polar regions, thereby isolating the 2DEG channels with a large 3.5 eV barrier. Specifically, adjacent III- and N-polar AlGaN/GaN heterojunctions were grown simultaneously on the patterned AlN nucleation layer on c-plane sapphire substrates. In this study, we propose a new paradigm of polarization isolation utilizing intrinsic electronic properties, realizing in situ isolation during device epitaxy without the need of post-growth processing. GaN electronics have hinged on invasive isolation such as mesa etching and ion implantation to define device geometry, which, however, suffer from damages, hence potential leakage paths.
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